| 摘要 |
PURPOSE: A fabrication method of transistors of semiconductor devices is provided to improve a drain saturation current and an electrical characteristic by fully degenerating a gate electrode of a PMOS(P-channel Metal Oxide Semiconductor) transistor without a boron penetration. CONSTITUTION: First gate oxides(3), polysilicon gate electrodes, gate spacers(6), LDD(Lightly Doped Drain) structured source/drains are formed in a semiconductor substrate(1) having an NMOS(N) and a PMOS(P) regions. After forming an interlayer dielectric(7), the interlayer dielectric(7) is etched to expose the polysilicon gate electrodes. The polysilicon gate electrode and gate oxide(3) on the PMOS(P) region are removed to expose the semiconductor substrate(1). A second gate oxide(3p) is formed on the entire surface of the resultant structure. Then, a p+ doped polysilicon(9a) is filled into the removed polysilicon gate electrode region, thereby fully degenerating the gate electrode in the PMOS regions(P).
|
