| 摘要 |
The present invention relates to a process and a device for growing single crystals, especially of CaF2. Within the framework of said process, a stack of crucibles (100, 101, ..., 106, ...) containing the starting material is successively moved translationally through a melting chamber (C1) and an annealing chamber (C2), said movement being continuous, smooth and without interruption. The present invention provides for the preparation of fluoride, single crystals, particularly optical fluoride single crystals and optical UV lambda < 248 nm lithography element blanks, most preferably CaF2. |
