| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of analyzing metallic impurities in a level of 107 to 108 atoms/cm2 which is requested for regulating the cleanness of a semiconductor device, in a test of a semiconductor substrate with good accuracy simultaneously with the analysis of multi-elements. SOLUTION: A semiconductor substrate is treated with a decomposed liquid with a component not being contained in the substrate as its internal standard substance, the decomposed liquid treating the substrate is evaporated on a substrate for analysis and the component evaporated on the substrate for analysis is analyzed by a flight time type secondary ion mass analytical device.</p> |
