| 摘要 |
PROBLEM TO BE SOLVED: To prevent such a problem that normal access is affected by refreshing and refreshing cannot be executed by continuous write-in. SOLUTION: In this semiconductor memory, a clock signal being a basis of time interval of refresh-operation of one row address is generated as a clock signal for refreshing, variation of an access address (Address) for a memory cell externally supplied is detected, after refreshing for a memory cell corresponding to a refresh-address is executed making generation of its detecting signal as an trigger, access for a memory cell indicated by the access address is performed. When a write-in enable signal/WE is inputted, after refreshing is performed making its signal as a trigger, write-in operation is performed, refresh-operation making generation of a variation detecting signal of an access address as a trigger is stopped during the prescribed period based on the clock signal for refreshing. |
