发明名称 MAGNETORESISTANCE EFFECT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a magnetoresistance effect device that can securely reduce the so-called Barkhausen noise. SOLUTION: The opposite surface of an upper shield layer 35 is prescribed nearly along one plane 51. The upper shield layer 35 faces a magnetic domain control film 42, an electrode film 43, and a magnetoresistance effect film 41. It is expected that residual magnetization Mr will exist in the same direction as magnetization Mg of the magnetic domain control film 42 in the upper shield layer 35, after the magnetic domain control film 42 is polarized. On the surface opposite to the upper shield layer 35, the magnetization Mr cannot easily break off. A magnetic pole cannot be easily generated. Weakening in a vertical bias magnetic field BS can be avoided based on the residual magnetization Mr of the upper shield layer 35.
申请公布号 JP2002185059(A) 申请公布日期 2002.06.28
申请号 JP20000377033 申请日期 2000.12.12
申请人 FUJITSU LTD 发明人 TAGAWA IKUYA;YAMADA KENICHIRO
分类号 G01R33/09;G11B5/31;G11B5/39;H01F10/32;H01L43/08;(IPC1-7):H01L43/08 主分类号 G01R33/09
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