发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to improve an etch profile of a DTI(Deep Trench Isolation) by removing tip points generated at bottom corners of a trench. CONSTITUTION: A deep trench is formed in a desired portion of a semiconductor substrate(21) by performing a first etch processing at atmosphere of low polymer formation gases. By performing a second etch processing at atmosphere of high polymer formation gases so as to remove tip portions generated at bottom corners of the deep trench, a trench(22) having an improved etch profile is formed. Mixed gases of HBr and CF4 are used as the polymer formation gas.
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申请公布号 |
KR20020050917(A) |
申请公布日期 |
2002.06.28 |
申请号 |
KR20000080221 |
申请日期 |
2000.12.22 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHOI, YUN JE;LIM, TAE JEONG |
分类号 |
H01L21/76;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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