| 摘要 |
PURPOSE: A formation method of an interconnection is provided to form a copper layer having an equal thickness by removing a barrier through a chemical processing. CONSTITUTION: After forming a trench(9) in an oxide(8) and a silicon substrate(7), a barrier(10) and a copper layer(11) are sequentially formed to fill into the trench(9). At this time, the barrier(10) forming material is adequately made of a TiN so as to prevent a diffusion phenomenon between the copper layer(11) used as an interconnection and the oxide(8). Then, the copper layer(11) is etched to expose the barrier(10) using a CMP(Chemical Mechanical Polishing). Then, the exposed barrier(10) is removed by dipping a wafer formed with the detailed structure to a NH4OH solution. At this time, the TiN composing the barrier(10) is chemically reacted with the NH4OH solution and removed, thereby preventing a dishing and a corrosion phenomena on the copper layer(11) so as to get the flat surface of the copper layer(11).
|
