发明名称 |
Method and system for integrating shallow trench and deep trench isolation structures in a semiconductor device |
摘要 |
A semiconductor device and a method for constructing a semiconductor device is disclosed. A deep trench isolation structure (108) is formed proximate a surface of a semiconductor substrate (106). A deep trench plug (122) layer is deposited within the deep trench isolation structure (108). A shallow trench isolation structure (130) is formed where the deep trench isolation structure (108) meets the surface of the semiconductor substrate (106). A shallow trench plug layer (133) is deposited within the shallow trench isolation structure (130).
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申请公布号 |
US2002081809(A1) |
申请公布日期 |
2002.06.27 |
申请号 |
US20010024091 |
申请日期 |
2001.12.14 |
申请人 |
PINTO ANGELO;ROMANI RICARDO A.;HOWARD GREGORY E. |
发明人 |
PINTO ANGELO;ROMANI RICARDO A.;HOWARD GREGORY E. |
分类号 |
H01L21/762;(IPC1-7):H01L21/336;H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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