发明名称 |
DUAL TRENCH ISOLATION FOR A PHASE-CHANGE MEMORY CELL AND METHOD OF MAKING SAME |
摘要 |
The invention relates to a phase-change memory device. The device includes a double-trench isolation structure around the diode stack that communicates to the lower electrode. The present invention also relates to a method of making a phase-change memory device. The method includes forming two orthogonal and intersecting isolation trenches around a memory cell structure diode stack.
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申请公布号 |
US2002081807(A1) |
申请公布日期 |
2002.06.27 |
申请号 |
US20000745322 |
申请日期 |
2000.12.21 |
申请人 |
XU DANIEL |
发明人 |
XU DANIEL |
分类号 |
H01L21/762;H01L27/24;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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