METHOD FOR FORMING GATE ELECTRODE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A formation method of a gate electrode is provided to improve a reliability by reducing a penetration of boron ions to channel regions through a gate insulating layer. CONSTITUTION: An insulating layer and an amorphous silicon layer are sequentially formed on a semiconductor substrate(100). A polysilicon layer is formed by performing an RTA(Rapid Thermal Annealing) on the amorphous silicon layer. At this time, the silicon grains of the polysilicon layer are small, because the RTA is performed at the temperature of 650-1100 deg.C for 5 to 10 seconds, thereby restraining a penetration of boron ions formed in the following process through the polysilicon layer. A gate pattern made of a polysilicon pattern and a patterned gate insulating layer(110a) is formed by sequentially patterning the polysilicon layer and the insulating layer. A gate electrode(130b) is formed by implanting boron ions into the polysilicon pattern.