发明名称 Method of manufacturing semiconductor device
摘要 The present invention aims to provide a method of manufacturing a semiconductor device, which is capable of reducing or preventing damage of wirings formed over a semiconductor substrate. A method of manufacturing a semiconductor device comprises a step for forming a wiring on the surface of a semiconductor substrate with a predetermined circuit formed thereon, a step for forming a resin layer whose surface is substantially flat, on the wiring, and a step for processing the back of the semiconductor substrate after the formation of the resin layer.
申请公布号 US2002081831(A1) 申请公布日期 2002.06.27
申请号 US20010866815 申请日期 2001.05.30
申请人 IGARASHI TADASHI 发明人 IGARASHI TADASHI
分类号 H01L23/52;H01L21/301;H01L21/304;H01L21/3205;H01L21/4763;H01L23/00;H01L23/31;(IPC1-7):H01L21/476 主分类号 H01L23/52
代理机构 代理人
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