| 摘要 |
PURPOSE: A metal interconnection formation method of semiconductor devices is provided to prevent voids in a plug and to simplify metallization processes by directly forming a tungsten plug without forming a contact hole. CONSTITUTION: A plurality of metal lines are sequentially formed on a semiconductor substrate. A tungsten film is deposited on the resultant structure by CVD(Chemical Vapor Deposition). The tungsten film is selectively etched by using a first photoresist pattern, thereby directly forming a tungsten plug(58). After forming a second photoresist pattern on the tungsten plug(58), metal interconnections are formed by sequentially patterning the metal lines.
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