| 摘要 |
PURPOSE: A semiconductor storage device having a selectively formed silicide layer is provided to reduce the resistance of a gate electrode and a source/drain region, and reduce the source/drain contact resistance. CONSTITUTION: A source region(S) and a drain region(D) are formed on the opposite sides of the gate electrode(G) wherein the source region(S) has a metal silicide layer(121) only in the source contact region. Since the metal silicide layer(121) will not be formed on the surface of the source region(S), even if protrusions and recesses are present thereon, the metal silicide layer(121) will not be formed in broken state at the protrusions and recesses. Since a metal forming the metal silicide layer(121) will not absorb silicon atoms in the source region(S).
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