发明名称 LIQUID COMPOSITION AND ETCHING PROCESS USING SAME
摘要 The present invention relates to a liquid composition for etching copper or metal compounds comprising copper as the main component, which are formed on oxides composed of indium, gallium, zinc and oxygen, and an etching method which brings the liquid composition in contact with a substrate which is made of copper or a metal compound comprising copper as the main component. The liquid composition of the present invention comprises: (A) hydrogen peroxide, (B) acids, (C) a source of fluoride ions, (D) at least one compound selected from the group consisting of amino tris(methylenephosphonic acid), N,N,N′,N′- ethylene diamine tetrakis(methylenephosphonic acid), diethylene triamine penta(methylenephosphonic acid), bis(hexamethylene) triamine penta (methylenephosphonic acid) and penta ethylene hexamine octa(methylenephosphonic acid), (E) a hydrogen peroxide stabilizer, and (F) water, and has a pH value of 5 or below. The liquid composition of the present invention suppresses damage to oxides composed of indium, gallium, zinc and oxygen, and therefore, can be used to etch copper or a metal compound comprising copper as the main component, which are formed on oxides composed of indium, gallium, zinc and oxygen.
申请公布号 KR20160064015(A) 申请公布日期 2016.06.07
申请号 KR20150165752 申请日期 2015.11.25
申请人 MITSUBISHI GAS CHEMICAL COMPANY, INC. 发明人 TAKEUCHI HIDENORI;YUBE KUNIO
分类号 C09K13/04;C09K13/06;C23F1/18;H01L21/306 主分类号 C09K13/04
代理机构 代理人
主权项
地址