发明名称 PHOTOMASK, METHOD FOR INSPECTING PATTERN DEFECT AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To accurately inspect pattern defects by utilizing a mask size checking mark formed in a photomask. SOLUTION: The photomask has a product pattern and a mask size checking mark 3 disposed on the periphery of the product pattern. The mask size checking mark 3 includes a line pattern 4 having a line width equal to that of the product pattern and a reference pattern 5 disposed next to the line pattern 4 and having a larger width than the line pattern 4.</p>
申请公布号 JP2002182368(A) 申请公布日期 2002.06.26
申请号 JP20000384127 申请日期 2000.12.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 MORI KIYOSHI
分类号 G01B21/00;G01N21/956;G03F1/38;G03F1/44;G03F7/20;H01L21/027;H01L21/66;(IPC1-7):G03F1/08 主分类号 G01B21/00
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