发明名称 |
PHOTOMASK, METHOD FOR INSPECTING PATTERN DEFECT AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To accurately inspect pattern defects by utilizing a mask size checking mark formed in a photomask. SOLUTION: The photomask has a product pattern and a mask size checking mark 3 disposed on the periphery of the product pattern. The mask size checking mark 3 includes a line pattern 4 having a line width equal to that of the product pattern and a reference pattern 5 disposed next to the line pattern 4 and having a larger width than the line pattern 4.</p> |
申请公布号 |
JP2002182368(A) |
申请公布日期 |
2002.06.26 |
申请号 |
JP20000384127 |
申请日期 |
2000.12.18 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
MORI KIYOSHI |
分类号 |
G01B21/00;G01N21/956;G03F1/38;G03F1/44;G03F7/20;H01L21/027;H01L21/66;(IPC1-7):G03F1/08 |
主分类号 |
G01B21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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