METHOD FOR FABRICATING EPI CHANNEL OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating an epi channel of a semiconductor device is provided to form a SiGe epi layer of a uniform thickness, by forming a silicon epi layer and by performing a Ge ion implantation process and a laser thermal process(LTP) process. CONSTITUTION: The silicon epi layer(18) is formed in a predetermined region on a semiconductor substrate(11). A Ge ion implantation process and an LTP process are performed regarding the silicon epi layer to transform the silicon epi layer into the SiGe epi layer(19). A gate oxide layer is formed on the SiGe epi layer.