| 摘要 |
A fabrication method of a semiconductor device improves the hot carrier immunity and prevents the deterioration of electrical characteristics of p-channel transistors. The fabrication method of the semiconductor device includes: sequentially forming a gate insulating film and a gate electrode; implanting low-density impurity ions into the semiconductor substrate at both sides of the gate electrode; forming sidewall spacers on side surfaces of the gate electrode; and implanting high-density impurity ions into the semiconductor substrate using the sidewall spacers as a mask, thereby forming source/drain regions. In methods embodying the invention, before or after forming the sidewall spacers, nitrogen ions are implanted into a portion of the gate insulating film adjacent to outer sides of the gate electrode. Thus, the semiconductor device is fabricated, with a silicon oxide gate insulating film formed over a channel region of a transistor, and a nitrogen oxide gate insulating film formed over the semiconductor substrate at outer sides of the channel region. |
