| 摘要 |
A ferroelectric random access memory (FeRAM) device including an active matrix provided with a transistor and diffusion regions, a first capacitor structure formed on a portion of the active matrix and provided with a first capacitor thin film made of strontium bismuth tantalate (SBT), a second capacitor structure formed on a remaining portion of the active matrix and provided with a second capacitor thin film made of lead zirconate titanate (PZT), and a metal interconnection formed on the first and the second capacitor structures, thereby electrically connecting the first and the second capacitor structures to one of the diffusion regions.
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