| 摘要 |
PURPOSE: A method for fabricating a flash memory cell is provided to improve a charge maintaining characteristic by preventing charges from being lost in the edge of a floating gate, and to decrease a repair rate by reducing a fail bit. CONSTITUTION: A tunnel oxide layer(23), the first polysilicon layer(24) and an oxide layer(25) are sequentially formed on a semiconductor substrate(21) having a field oxide layer(22). A predetermined region of the oxide layer, the first polysilicon layer and the tunnel oxide layer is etched to form a floating gate pattern. The second polysilicon layer is formed on the resultant structure and is blanket-etched to form a spacer on the sidewall of the first polysilicon layer. The oxide layer is removed. A dielectric layer(27), the third polysilicon layer(28), a tungsten silicide layer(29) and an anti-reflective coating(ARC)(30) are sequentially formed on the resultant structure. A predetermined region from the ARC to the tunnel oxide layer is etched to a stack gate in which a floating gate and a control gate are stacked. An impurity ion implantation process is performed regarding a predetermined region of the semiconductor substrate to form a source/drain region.
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