| 摘要 |
PROBLEM TO BE SOLVED: To shorten the manufacturing process of a semiconductor element provided with an LDD region. SOLUTION: A gate region 1 is formed on a silicon substrate, a dug part 2 is formed by etching the silicon substrate around the gate region 1, ions are digonally implanted to the vertically erected side wall of the dug part 2 and the LDD region 3 is formed. Ions are vertically implanted to the bottom surface of the dug part 2 and a source/drain region 4 is formed.
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