| 摘要 |
PURPOSE: An etching method of an ARC(Anti Reflective Coating) is provided to reduce a CD(Critical Dimension) and to simplify manufacturing processes. CONSTITUTION: An objective etch layer(22) and a capping layer(23) are sequentially formed on a semiconductor substrate(21). A bottom ARC is formed on the capping layer(23). A bottom ARC pattern(24a) having a sloped profile is formed by etching the bottom ARC by using a photoresist pattern(25) as a mask and using Cl2 gases of 50-300 sccm. Then, the objective etch layer(22) is etched by using the bottom ARC pattern(24a) as a mask.
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