| 摘要 |
PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to reduce contact resistance, by omitting a process for forming a deep contact so that a metal barrier layer is smoothly deposited. CONSTITUTION: The first metal interconnection(32) is formed in a predetermined region of a semiconductor substrate(31). The first insulation layer(33) is formed on the entire surface of the semiconductor substrate to expose the upper surface of the first metal interconnection. A metal layer of a column structure is formed in a predetermined region on the first metal interconnection by interposing the first metal barrier layer(34). A diffusion barrier layer is formed on the entire surface of the semiconductor substrate to expose the upper surface of the metal layer. The second insulation layer is formed on the entire surface of the semiconductor substrate including the metal layer. A contact hole is formed to expose the surface of the metal layer while a trench of a predetermined depth is formed in the second insulation layer adjacent to the contact hole. The second metal interconnection is formed in the contact hole and the trench by interposing the second metal barrier layer.
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