发明名称 High temperature electrostatic chuck
摘要 A hot electrostatic chuck having an expansion joint between a chuck body and a heat transfer body. The expansion joint provides a hermetic seal, accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or controls the amount of heat conducted from the chuck body to the heat transfer body. A plenum between spaced apart surfaces of the chuck body and the heat transfer body is filled with a heat transfer gas such as helium which passes through gas passages such as lift pin holes in the chuck body for backside cooling of a substrate supported on the chuck. The heat transfer gas in the plenum also conducts heat from the chuck body into the heat transfer body. The chuck body can be made of a material with desired electrical and/or thermal properties such as a metallic material or ceramic material. The chuck can be used in various semiconductor processes such as plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of noble metals such as Pt which require etching at high temperatures to volatilize low volatility etch products.
申请公布号 US2002075625(A1) 申请公布日期 2002.06.20
申请号 US20020075601 申请日期 2002.02.15
申请人 SEXTON GREG;KENNARD MARK ALLEN;SCHOEPP ALAN 发明人 SEXTON GREG;KENNARD MARK ALLEN;SCHOEPP ALAN
分类号 C23C14/50;C23C16/458;H01L21/205;H01L21/302;H01L21/3065;H01L21/683;(IPC1-7):H01H1/00 主分类号 C23C14/50
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