发明名称 |
ELECTROSTATIC CHUCK AND ITS MANUFACTURING METHOD |
摘要 |
PURPOSE: To obtain an electrostatic chuck having a dielectric layer of aluminum nitride and attracting a wafer onto the dielectric layer in which generation of particles due to thermal expansion of the wafer is prevented after the wafer is attracted by means of the chuck. CONSTITUTION: The electrostatic chuck has a dielectric layer 5 of aluminum nitride and attracts a wafer onto the dielectric layer 5. The surface 1a of the dielectric layer 5 has a center line mean surface roughness of 25 nm or less and is covered with a surface layer 3 of 200 nm thick or above composed of a material harder than aluminum nitride composing the dielectric layer. |
申请公布号 |
KR20020046183(A) |
申请公布日期 |
2002.06.20 |
申请号 |
KR20010077215 |
申请日期 |
2001.12.07 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
TSURUTA HIDEYOSHI |
分类号 |
B23Q3/15;B23Q3/154;C23C16/44;C23C16/458;G03F7/20;H01L21/68;H01L21/683;H02N13/00;(IPC1-7):H01L21/68 |
主分类号 |
B23Q3/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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