| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to guarantee sufficient capacitance without deteriorating the characteristic of the semiconductor device, by forming a junction layer of a lower insulation layer and a lower electrode so that a contact plug is exposed to form the capacitor coupled to the contact plug. CONSTITUTION: The lower insulation layer(13) having the contact plug is formed on a semiconductor substrate(11). A sacrificial insulation layer pattern is applied on the contact plug. The junction layer(19) is formed on the resultant structure. The junction layer is planarization-etched to planarize the junction layer and the sacrificial insulation layer pattern. The sacrificial insulation layer pattern is eliminated and the contact plug is exposed. The lower electrode(21) coupled to the contact plug is formed. A dielectric layer(23) for planarizing the upper portion of the lower electrode is formed. An upper electrode(25) is formed on the dielectric layer.
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