LASER DIODE WITH NITROGEN INCORPORATING BARRIER

摘要

In an active region (14) of an optical-electronic semiconductor device (10), nitrogen is incorporated in a barrier (32) adjacent a GaNAs-based e.g. GaInNAs, quantum well (24) to improve device performance at wavelength bands above 1.2 microns. In another specific example embodiment, a mirror or cladding layer (16) is grown over the active region (14) in a manner that removes nitrogen complex otherwise present with Ga-N bonds in the active region (14). The embodiment can be implemented as one of a number of configurations including vertical cavity surface emitting lasers and edge emitting lasers.