METHOD FOR FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A gate electrode formation method of semiconductor devices is provided to reduce an effective oxide thickness and to improve a leakage current by forming double gate oxides using ALD(Atomic Layer Deposition). CONSTITUTION: An aluminum oxide(Al2O3)(2) is deposited on a semiconductor substrate(1), and an iridium oxide(Y2O3)(3) is deposited on the aluminum oxide(2) by ALD, thereby forming a gate oxide(23) of double layers. A polysilicon layer(4) is deposited on the gate oxide. By sequentially patterning the polysilicon layer(4), the iridium oxide(3) and the aluminum oxide(2), a gate electrode(5) is formed.