Optically pumped vertical cavity semiconductor laser device

摘要

A vertical external cavity semiconductor laser device comprises a multi-layer laser structure having a pump light receiving face 580 for receiving incident pump light at a pump wavelength, and a semiconductor gain region 525 operable to provide optical gain at a laser emission wavelength in response to the pump light; two laser cavity mirrors disposed about the multi-layer laser structure so as to define a laser cavity wherein each laser cavity mirror is operable to reflect light at the laser emission wavelength; and a pump mirror 545 disposed behind the gain region so as to reflect pump light back through the gain region for at least a second pass. An anti-reflection structure 535 is provided above the gain region to increase the quantity of pump light entering the device.