发明名称 |
VORRICHTUNG UND VERFAHREN ZUR KRISTALLZÜCHTUNG |
摘要 |
Apparatus for bulk vapor phase crystal growth comprising: at least one source zone and at least one sink zone each associated with means for independent temperature control within the zone; and at least one passage means adapted for transport of vapor from source to sink zone; and additionally comprising means for in-situ monitoring of the sink zone; wherein means for monitoring is substantially non-intrusive in terms of temperature regulation within the sink zone; process for bulk vapor phase crystal growth employing the apparatus; method for starting up the process; method for controlling the process; use for any bulk vapor transport technique; equipment for monitoring growth using the apparatus or process; and crystal grown with the apparatus or process. |
申请公布号 |
AT218631(T) |
申请公布日期 |
2002.06.15 |
申请号 |
AT19980936502T |
申请日期 |
1998.07.27 |
申请人 |
UNIVERSITY OF DURHAM |
发明人 |
MULLINS, JOHN, TOMLINSON;LTD. |
分类号 |
C30B23/00;(IPC1-7):C30B23/00 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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