| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive resist composition suitable to be used for an exposure light source at <=160 nm wavelength, especially for F2 excimer laser light (157 nm), that is a positive resist composition having enough transparency when a 157 nm light source is used and exhibiting sufficient coating property and no developing defect, and moreover, and that can form a pattern with good sensitivity and resolution and excellent durability against oxygen plasma. SOLUTION: The positive resist composition contains (A) a resin which has a structure of a polymer skeleton with fluorine atoms substituted in the main chain and/or side chains and contains a repeating unit having a silicon group and which decomposes by the effect of acid to increase the solubility with an alkali developer, and (B) a compound which produces acid by irradiation of active rays or radiation. |
