发明名称 EXCHANGE JUNCTION FILM, MAGNETORESISTANCE EFFECT ELEMENT USING THE EXCHANGE JUNCTION FILM, AND THIN-FILM MAGNETIC HEAD USING THE MAGNETORESISTANCE EFFECT ELEMENT
摘要 PROBLEM TO BE SOLVED: To solve the problem of lattice distortion that is generated in parallel with an interface being unable to be effectively relaxed, an antiferromagnetic layer being unable to be properly subjected to regularization modification, and an exchange coupled magnetic field becoming small, while the antiferromagnetic layer is set to the regularization modification, when a twin crystal boundary is formed in parallel with the interface with a ferromagnetic layer in a twin crystal, even if the twin crystal is formed in the antiferromagnetic layer. SOLUTION: In the antiferromagnetism layer (PtMn), the twin-crystal boundary (2), that is not parallel with the interface is formed, thus relaxing the lattice distortion in parallel with the interface by changing atoms into mirror-symmetry, when the antiferromagnetism layer is subjected to the regularization modification, thus effectively promoting the regularization modification of the antiferromagnetism layer, and hence obtaining the large exchange junction magnetic field.
申请公布号 JP2002171010(A) 申请公布日期 2002.06.14
申请号 JP20000366927 申请日期 2000.12.01
申请人 ALPS ELECTRIC CO LTD 发明人 HASEGAWA NAOYA;SAITO MASAJI
分类号 G01R33/09;G11B5/39;H01F10/08;H01F10/32;H01L43/08;(IPC1-7):H01L43/08 主分类号 G01R33/09
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