| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing process wherein a downward projection window of a dual damascene structure or the like is easily opened with good controllability even if the aperture is narrow. SOLUTION: On an inter-layer insulating film, a recessed part, comprising a silicon nitride film or the like, is provided, and then a window for exposing the inter-layer insulating film to a bottom part is provided at a part of it, which is to be a mask. After the mask is etched back, the inter-layer insulating film which is a base material is also etched. Here, the inter-layer insulating film is etched in such manner as variation in thickness of the mask is reflected on the inter-layer insulating film which is a base material, thus a window of downward projection of a dual damascene structure or the like is easily formed in the inter-layer insulating film. A window formed in such process like this is useful as an interconnection layer as well as a capacitor. |
