Contact metallization used in production of semiconductors contains copper distributed in partial volume

摘要

Contact metallization contains copper distributed in a partial volume. An Independent claim is also included for the production of a contact metallization comprising applying a contact metallization containing copper on a p-conducting region (2) of a GaN-based semiconductor structure (1); and curing the metallization at elevated temperature so that copper is distributed in partial volume regions of the contact metallization. Preferred Features: Copper is uniformly distributed in the whole of the metallization. The metallization contains a layer of nickel, gold, platinum, palladium, tantalum, titanium, chromium, tungsten, indium, magnesium or silicon. An adhesion layer (4) containing titanium or chromium is formed on the side of the metallization facing the semiconductor.