发明名称 |
Method of manufacturing flash memory |
摘要 |
A method of manufacturing flash memory. The method includes using a single wafer consecutive system process. A silicon wafer is placed inside one of the reaction chambers of a chemical vapor deposition station. Tunneling oxide layer, silicon nitride floating gate, silicon oxide layer and control gate are simultaneously formed over wafers inside the station. Breaking the vacuum inside the station and cleaning the wafer are unnecessary between various processing steps.
|
申请公布号 |
US2002072175(A1) |
申请公布日期 |
2002.06.13 |
申请号 |
US20010777231 |
申请日期 |
2001.02.05 |
申请人 |
CHANG KENT KUOHUA;HSUEH CHENG-CHEN CALVIN |
发明人 |
CHANG KENT KUOHUA;HSUEH CHENG-CHEN CALVIN |
分类号 |
H01L21/28;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|