发明名称 |
Method of aligning a photolithographic mask to a crystal plane |
摘要 |
In order to align a mask to a specific crystal plane in a wafer, a first mask having at least one alignment structure is deposited on the wafer surface. The alignment structure is coarsely aligned with the specific crystal plane and has an array of components that are offset relative to each other by known angles defining the degree of precision with which said mask can be finely aligned with said crystal plane. Next, an anisotropic etch is performed through the first mask to etch the alignment structure into the wafer surface. The components of the alignment structure produce different etch patterns in the wafer surface according to their relative orientation to the specific crystal plane. Finally, a second mask is formed on the wafer surface having a reference structure thereon. The reference structure on the second mask is aligned relative to an etch pattern identified as being finely aligned with the specific crystal plane.
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申请公布号 |
US2002072193(A1) |
申请公布日期 |
2002.06.13 |
申请号 |
US20010799494 |
申请日期 |
2001.03.07 |
申请人 |
ANTAKI ROBERT;YAN RIOPEL;VACHON ANNIE |
发明人 |
ANTAKI ROBERT;YAN RIOPEL;VACHON ANNIE |
分类号 |
H01L21/027;G03F9/00;H01L23/544;(IPC1-7):H01L21/76;H01L21/301;H01L21/46;H01L21/78 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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