IONIZED METAL PLASMA DEPOSITION PROCESS HAVING ENHANCED VIA SIDEWALL COVERAGE

摘要

A method for depositing an adhesion layer in a contact region (240) on a semiconductor substrate (200) provides for sufficient coverage on the bottom and sidewalls of the contact region. In an example embodiment, a contact region having a bottom and sidewalls has a first coat (250a) of the adhesion layer (260) deposited thereon at a thickness greater than the thickness on the sidewall. To compensate for the narrower adhesion layer thickness on the sidewalls, a second coat (250b) of the adhesion layer is deposited so that the second coat on the sidewalls is at a thickness greater than the second coat thickness on the bottom. The adhesion layer is titanium nitride although other materials may be used as well.