摘要 |
A method of forming a transistor and a semiconductor-metal-oxide transistor. The method at least includes provides a substrate; covers the substrate by a doped amorphous polysilicon layer and a barrier layer in sequence, and removes part of the barrier layer and part of the doped amorphous polysilicon layer to form a hole which expose part of the substrate; forms a dielectric layer on both the barrier layer and the hole, wherein the hole is not totally filled by the dielectric layer; forms a conductor layer on the dielectric layer, wherein the hole is not totally filled by both the conductor layer and the dielectric layer; forms a metal layer on the conductor layer; performs a planarizing process by using the barrier layer as a stop layer; and removing the barrier layer. The other at least includes a U-shaped dielectric layer which is located on a substrate; a U-shaped polysilicon layer which is located on the hollow of the U-shaped dielectric layer; a metal layer which is located on the hollow of the U-shaped polysilicon layer; a source doped region which is located in the substrate and is briefly located on one side of the U-shaped dielectric layer; a drain doped region which is located in the substrate and is briefly located on another side of the U-shaped dielectric layer; and an epi-like silicon layer which is located on both the source doped region and the drain doped region.
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