| 摘要 |
A MOS transistor fabrication method of the present invention comprises a step of forming a gate insulating film upon a semiconductor substrate; a step of forming a silicon film made from polysilicon or amorphous silicon upon the gate insulating film; a step of applying a heat treatment carried out at 800 to 1000° C. and for a duration of 1 to 10 seconds on the silicon film; a step of pre-doping by implanting impurity ions into the silicon film; a step of patterning a gate electrode by etching the silicon film; a step of forming sidewalls at the side portions of the gate electrode; and a step of doping the gate electrode with an impurity by implanting ions into the gate electrode and the semiconductor substrate as well as forming a source and a drain on the surface of the semiconductor substrate.
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