发明名称 Film transfer method
摘要 A device is formed by transferring a film onto a substrate when the film requires but the substrate is not adapted to a high temperature heat treatment process. The film having layers and formed on a first substrate having layers is transferred onto a second substrate having layers. The method of transferring the film comprises a first step of forming a lift-off layer and the film to be transferred on the first substrate, a second step of bonding the film to be transferred to the second substrate and a third step of separating the film to be transferred from the first substrate by etching the lift-off layer and transferring it onto the second substrate.
申请公布号 US2002066525(A1) 申请公布日期 2002.06.06
申请号 US20010998227 申请日期 2001.12.03
申请人 WADA TAKATSUGU;NOJIRI HIDETOSHI;AKAIKE MASATAKE;KAWASAKI TAKEHIKO;KURASHIMA REI;NOZU SATOSHI;HOKAYAMA KOZO 发明人 WADA TAKATSUGU;NOJIRI HIDETOSHI;AKAIKE MASATAKE;KAWASAKI TAKEHIKO;KURASHIMA REI;NOZU SATOSHI;HOKAYAMA KOZO
分类号 B41J2/16;B32B3/00;B41J2/045;B41J2/055;B44C1/165;H01L21/00;H01L21/30;H01L41/09;H01L41/18;H01L41/22;(IPC1-7):B44C1/165 主分类号 B41J2/16
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