发明名称 |
Film transfer method |
摘要 |
A device is formed by transferring a film onto a substrate when the film requires but the substrate is not adapted to a high temperature heat treatment process. The film having layers and formed on a first substrate having layers is transferred onto a second substrate having layers. The method of transferring the film comprises a first step of forming a lift-off layer and the film to be transferred on the first substrate, a second step of bonding the film to be transferred to the second substrate and a third step of separating the film to be transferred from the first substrate by etching the lift-off layer and transferring it onto the second substrate.
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申请公布号 |
US2002066525(A1) |
申请公布日期 |
2002.06.06 |
申请号 |
US20010998227 |
申请日期 |
2001.12.03 |
申请人 |
WADA TAKATSUGU;NOJIRI HIDETOSHI;AKAIKE MASATAKE;KAWASAKI TAKEHIKO;KURASHIMA REI;NOZU SATOSHI;HOKAYAMA KOZO |
发明人 |
WADA TAKATSUGU;NOJIRI HIDETOSHI;AKAIKE MASATAKE;KAWASAKI TAKEHIKO;KURASHIMA REI;NOZU SATOSHI;HOKAYAMA KOZO |
分类号 |
B41J2/16;B32B3/00;B41J2/045;B41J2/055;B44C1/165;H01L21/00;H01L21/30;H01L41/09;H01L41/18;H01L41/22;(IPC1-7):B44C1/165 |
主分类号 |
B41J2/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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