发明名称 |
Integrated semiconductor memory with redundant cells |
摘要 |
A cell array includes multiple memory cells in a matrix arrangement. Wires of column lines used for accessing memory cells, intersect each other between edges of cell array parallel to rows. Redundant rows ZP(1)-ZP(P) of memory cells are arranged in regions of different data topology in the cell array. |
申请公布号 |
EP1160669(A3) |
申请公布日期 |
2002.06.05 |
申请号 |
EP20010110795 |
申请日期 |
2001.05.04 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
FISCHER, HELMUT, DR.;KRAUSE, GUNNAR |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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