发明名称 Wet etching system for manufacturing semiconductor devices
摘要 A wet etching system includes a tank for containing a chemical and having an open top portion, and a heater disposed in the tank for heating the chemical contained therein. A cover is arranged on the open top portion of the tank, and the cover includes a cooling apparatus formed therein. The wet etching method includes placing a semiconductor substrate, having a layer thereon to be etched, into the tank, and then driving the heater to maintain the chemical within a temperature range. Deionized water in the chemical evaporates when the temperature range is greater than a boiling point of the deionized water. The evaporated deionized water condenses on the cooler cover and then flows back into the tank to maintain a constant chemical concentration.
申请公布号 US6398904(B1) 申请公布日期 2002.06.04
申请号 US19990323014 申请日期 1999.06.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HEO YONG-WOO;LIM HEOUNG-BIN
分类号 H01L21/306;B05D1/00;C23F1/02;H01L21/00;H01L21/302;H01L21/311;H01L21/3213;H01L21/461;(IPC1-7):C23F1/02 主分类号 H01L21/306
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