发明名称 |
Wet etching system for manufacturing semiconductor devices |
摘要 |
A wet etching system includes a tank for containing a chemical and having an open top portion, and a heater disposed in the tank for heating the chemical contained therein. A cover is arranged on the open top portion of the tank, and the cover includes a cooling apparatus formed therein. The wet etching method includes placing a semiconductor substrate, having a layer thereon to be etched, into the tank, and then driving the heater to maintain the chemical within a temperature range. Deionized water in the chemical evaporates when the temperature range is greater than a boiling point of the deionized water. The evaporated deionized water condenses on the cooler cover and then flows back into the tank to maintain a constant chemical concentration.
|
申请公布号 |
US6398904(B1) |
申请公布日期 |
2002.06.04 |
申请号 |
US19990323014 |
申请日期 |
1999.06.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HEO YONG-WOO;LIM HEOUNG-BIN |
分类号 |
H01L21/306;B05D1/00;C23F1/02;H01L21/00;H01L21/302;H01L21/311;H01L21/3213;H01L21/461;(IPC1-7):C23F1/02 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|