| 发明名称 |
Apparatus and method for multi-layer deposition |
| 摘要 |
An apparatus controls deposition rate of multi-layer films deposited by chemical vapor deposition (CVD). The apparatus includes a CVD chamber; a vapor precursor injector coupled to the CVD chamber; and a liquid precursor injector coupled to the CVD chamber.
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| 申请公布号 |
US2002062789(A1) |
申请公布日期 |
2002.05.30 |
| 申请号 |
US20000725658 |
申请日期 |
2000.11.29 |
| 申请人 |
NGUYEN TUE;BERCAW CRAIG ALAN |
发明人 |
NGUYEN TUE;BERCAW CRAIG ALAN |
| 分类号 |
C23C16/02;C23C16/18;C23C16/448;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/02 |
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