Organic field effect transistor has at least two current channels and/or one vertical current channel transverse to surface of substrate formed by field effect when voltage applied

摘要

The device has at least one semiconducting layer (6) connecting at least one source (4) and drain electrode (5), at least two isolating layers (3, 7) and at least one conducting layer with a gate electrode (8) arranged on the substrate (1) so that after applying a voltage to the gate electrode at least two current channels and/or one vertical current channel (9) transverse to the surface of the substrate are formed by the field effect. Independent claims are also included for the following: an IC with at least one organic FET, a method of manufacturing an IC, a use of an IC with at least two stacked transistors for building logic circuits, an organic display driver and an RFID tag.