发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a DRAM of an SRAM type interface from which a timing rule to addresses is removed. SOLUTION: The semiconductor storage device includes a latch circuit for latching an address signal supplied from the external, a core circuit including a memory capacitor for executing access operation corresponding to an address stored in the latch circuit and a latch timing control circuit for previously storing that the address signal is changed in the operation of the core circuit and allowing the latch circuit to latch the changed address signal after the end of the operation of the core circuit.
申请公布号 JP2002150768(A) 申请公布日期 2002.05.24
申请号 JP20000338057 申请日期 2000.11.06
申请人 FUJITSU LTD 发明人 IKEDA HITOSHI
分类号 G11C11/403;G11C8/06;G11C11/408;(IPC1-7):G11C11/403 主分类号 G11C11/403
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