| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device and its writing drive method which can prevent reduction of pull-up drive power of a sense amplifier owing to reduction of cell power source voltage. SOLUTION: This device is provided with a memory cell 49, a sense amplifier means 48 for driving a bit line at the time of writing operation for the memory cell, writing drive means 40, 42 for applying data to the sense amplifier means responding to a write instruction, and power source driving means 44, 46 for providing ground voltage as a pull-down power source of the sense amplifier means responding to a bit line activating signal and the write instruction and providing selectively higher voltage than cell power source voltage or the cell power source voltage by the prescribed potential as a pull-up power source of the sense amplifier means.
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