| 摘要 |
PROBLEM TO BE SOLVED: To improve the performance of an analog/digital consolidated type semiconductor integrated circuit device. SOLUTION: The gate lengths (channel lengths) of complementary MISFETs (n-channel type MISFET and p-channel type MISFET), constituting circuit blocks such as a digital circuit part, an analog circuit part and a signal input/ output part, are set differently corresponding to the characteristics of the respective circuit blocks. Also, the resistive element of a digital signal input protective circuit and the resistive element of an analog signal input protective circuit are constituted of different materials. Further, a digital signal input/output part and an analog signal input/output part are arranged at positions separated farthest from each other on a semiconductor substrate (chip) 1, so that the chip layout will not make the noise of the digital signal input/output part sneak into the analog circuit part. |
