| 摘要 |
PROBLEM TO BE SOLVED: To provide an annealed wafer manufacturing method which clarifies the relations of the off angle of a wafer from its plane (100) with the haze appearing on the annealed surface to set an optimum off angle for suppressing the haze, resulting in improved device characteristics. SOLUTION: A mirror surface silicon wafer having an orientation inclined at an angle θ ranging 0.1 deg.<θ<0.2 deg. to a plane (100) or equivalent thereto is heat treated in hydrogen gas, inert gas, nitrogen gas or a mixed gas atmosphere thereof. |
