| 发明名称 |
MEMORY ELEMENT AND METHOD FOR PRODUCTION OF A MEMORY ELEMENT |
| 摘要 |
A memory element with organic material comprises two metallised layers, arranged one on top of the other, with first lines and second lines which are arranged to intersect with each other. A channel is formed at the intersections between the first line and the second line, which overlaps the first line partially and completely overlaps the second line. The channels are filled with a filling material, the electrical conductivity of which may be altered by an applied electrical voltage. |
| 申请公布号 |
WO0213284(A3) |
申请公布日期 |
2002.05.23 |
| 申请号 |
WO2001DE03037 |
申请日期 |
2001.08.09 |
| 申请人 |
INFINEON TECHNOLOGIES AG;HOFMANN, FRANZ;LUYKEN, RICHARD, JOHANNES;ROESNER, WOLFGANG |
发明人 |
HOFMANN, FRANZ;LUYKEN, RICHARD, JOHANNES;ROESNER, WOLFGANG |
| 分类号 |
H01L23/52;G11C13/02;H01L21/3205;H01L21/768;H01L27/10;H01L27/28;H01L35/24;H01L45/00;H01L51/05 |
主分类号 |
H01L23/52 |
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