| 摘要 |
PURPOSE: A method for fabricating a test pattern is provided to measure sidewall capacitance and a leakage current characteristic of a semiconductor device, by forming a bit line of a surpentine structure on a wafer, by forming a sidewall in the surpentine structure and by filling an electrode material to form an upper electrode. CONSTITUTION: A bit line(20) and a bit line sidewall(30) are formed on a wafer(10). A metal contact for connecting an electrode is formed at both ends of the bit line. A plug filling material is applied on the entire surface including the metal contact. The plug filling material is patterned to form the upper electrode.
|
