| 摘要 |
In a process of fabrication of a semiconductor device having its gate insulation films differ from each other in film thickness, each of a semiconductor substrate and a gate insulation film has its surface prevented from being contaminated. This enables a new gate insulation film to be normally formed on the surface of the semiconductor substrate. The process includes the steps of: forming a first gate insulation film in a device forming region on the surface of the semiconductor substrate; forming a protection film on the first gate insulation film, the film being made of an inorganic material; forming a first photosensitive etching-resistance film on the protection film; etching the film by using the first photosensitive etching-resistance film as a mask to have the first gate insulation film of a predetermined one of the device forming regions exposed; removing the thus exposed first gate insulation film by using the protection film as a mask; having the surface of the semiconductor substrate exposed; and, forming a second gate insulation film on the thus exposed surface of the semiconductor substrate in a condition in which the protection film is not removed.
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